LiDAR and Teralink Lens
InGaAs Infrared Detectors
SEI's wafer foundries, wafer growth, and device fabrication of InP and GaAs based products deliver unique advantages to customer-specific high-performance LiDAR sensors. InGaAs PIN photodiodes and APD sensors that are multichannel 1-dimensional or 2-dimensional arrays can be packaged with commercially available or customer-provided electronics.
SEI's capabilities also provide advantages in the development of customized high-performance LiDAR lasers, such as InP and GaAs based lasers from 850 nm to 1550 nm that are ultra-fast and high power.
Type II Superlattice (T2SL) structure based on SEI wafer foundries, wafer growth, and device fabrication. The detectors are hybridized and packaged into a camera-ready interface. eSWIR has an extended range sensitivity from 1.0 to 2.5 μm, low dark current, high frame rate, and stable operation. The sensor is ideal for hyperspectral imaging applications.
Great progress has been made in the development of MWIR/VLWIR image sensors. Expected applications include Earth observation from aircraft and satellites.
SEI is a world leader in fiber optic cables and silicon photonics interconnects. We are currently working with customers to develop next-generation fiber optic interconnects that will enable high density, temperature resistant, easy to clean, plug-in compatible solutions for co-packaged optics.
Low profile fiber array for silicon photonics. Guaranteed low-loss coupling to the integrated photonic circuit. Low-profile design fits into QSFP-DD and QSFP28 modules or custom on-board optics.
FlexBeamGuidE is custom designed to meet customer requirements with high-volume manufacturing.
MUX/DEMUX using PLC or TFF based technology can also be added to the FlexBeamGuidE for CWDM and FR4 solutions.