Press Release
Sumitomo Electric Launches High Quality SiC Epitaxial Wafer " EpiEra™"
October 12, 2017
Sumitomo Electric Industries, Ltd.
*This press release was originally published in Japanese on September 14, 2017.
Sumitomo Electric Industries, Ltd. has launched a high quality SiC epitaxial wafer, "EpiEra™", which attains a more than 99% defect free area in a wafer.
Power devices are semiconductor devices used in a wide range of applications such as power transmission, trains, automobiles, and electric appliances. They are increasingly required to offer higher efficiency at lower energy consumption.
SiC-based devices are expected to be a key component for energy-efficient solutions, and the demand is rapidly growing. However, to satisfy this demand and to compete with the yields and reliability of Si-based devices, material improvements are necessary.
Utilizing its multi-parameter and zone (MPZ™*
) control technology and 30-year experience in compound semiconductor development, Sumitomo Electric has succeeded in developing a high-quality SiC epitaxial wafer, "EpiEra™", and entered mass production stage.EpiEra™ has achieved an industry-leading 99% defect-free area (DFA*
), eliminating surface defects* and Basal Plane Dislocations (BPD* ). This improves its quality stability and reliability.Sumitomo Electric showcased this product at International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017 held in Washington D.C., USA on September 17-22, 2017.
The Company continues to contribute to the SiC-based power electronics industry through the development of SiC devices with even higher efficiency and lower energy consumption.