Society Report List
| Time | Society Name And Contribution Place | Reporter | Title |
|---|---|---|---|
| '03/11/06 | 4th International Workshop on Modeling in Crystal Growth | T. Kawase M. Tatsumi M. Fukuzawa M. Yamada |
Thermal stress effect on residual strain profiles in GaAs substrates Grown by LEC and VB techniques |
| '03/09/30 | 10th International Conference on Defects Recognition, Imaging and Physics in Semiconductors |
T. Kawase M. Tatsumi M. Fukuzawa M. Yamada |
Comparative study on residual strain profiles in GaAs substrates grown by LEC and VB techniques |
| '03/09/29 | 10th International Conference on Defects Recognition, Imaging and Physics in Semiconductors |
M. Kiyama M. Yamada M. Tatsumi |
Quantitative analysis of low-frequency current oscillation in semi-insulating GaAs |
| '03/5/12-16 | 15th IPRM, Santa Barbara | T.Iwasaki S.Sawada K.Ooki H.Kimura Y.Miura M.Yokogawa |
Correlation between Graded InAsP Layer and Photoluminescence Intensity for 2200nm CUTOFF In0.72Ga0.28As Grown By Chloride VPE. |
| '03/5/12-16 | 15th IPRM, Santa Barbara | K. Hashio N. Hosaka S. Fujiwara T. Sakurada R. Nakai N. Hara* Y. Tsusaka* J. Matsui* *Himeji Institute of Technology |
4-inch Fe-doped InP substrates manufactured using Vertical Boat Technique. |
| '02/10/20-23 | GaAs IC Symposium | T. Kawase N. Hosaka K. Hashio M. Matsushima T. Sakurada R. Nakai |
Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by Vertical Boat Growth. |
| '02/5/12-16 | 14th IPRM, Stockholm | H. Doi H. Kimura T. Iwasaki Y. Miura M. Yokogawa |
Highly uniformity 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application. |
| '01/8/01 | ICCG-13(invited) | Kensaku Motoki et al. |
"Growth and Characterization of Freestanding GaN Substrates" |
| '01/6/01 | E-MRS（invited） | Kensaku Motoki et al. |
"Preparation of Large GaN Substrates" On GaAs Substrates, SEI creates GaN Substrates after GaN growth in the process which carries out substrate exfoliation, and proposes the reduction mechanism of new dislocation. |
| '01/5/24 | 2001 GaAsMANTECH | Yoshiaki Hagi | "Manufacturing 6 inch GaAs substrates by the VB method" We have succeeded in the development of mass-production technology of 6 inch GaAs substrates from the perspective of Cost-Effective-Manufacturing. Manufacturing systems for producing 6-inch GaAs substrates are refined by optimizing the Vertical Boat(VB) method and the wafer polishing process. Introduction of low cost facilities leads to reduced manufaturing cost. The Taguchi method assists in the design of a furnace structure with a stable thermal environment and polishing conditions resulting in stable surface quality. |
| '01/5/17 | Handoutai Sangyou Shinbun Seminar | Masamichi Yokogawa | "Compound Semiconductor Material Technologies for Fiber Optric Communication Era" |
| '01/5/16 | 13th IPRM | Takashi Sakurada et al. |
"Novel RTA Technique for Large diameter GaAs Wafers Managing to Minimize Both Dopant Diffusion and Slip Formation" RTA sequence for suppressing both slip generation and dopant diffusion. |
| '01/5/16 | 13th IPRM | Shigeru Sawada | "Investigation of InP epitaxial films on GaAs Substrates grown by Chloride Vapor Phase Epitaxy" |
| '01/5/10 | Oyobuturi 71(2002)554 | Toshihiko Takebe | "ZnSe based White Light Emitting Diode" |
| '01/5 | 2001 InP and Releted Materials | Shin-ichi Sawada | "Market and Technology Trend of InP Substrates" This paper outlines the recent trends of fiber -optic market and technology trend of large diameter VCZ-InP substrate. |
| '01/3/23 | Handoutai Sangyou Shinbun Seminar | Masamichi Yokogawa | "Compound Semiconductor Materials for Fiber Optric Communication Age" |
| March 1, '01 | Electron Device Society, The Institute of |
Ryusuke Nakai Shin-ichi Sawada |
"Recent Technology Trend of Compound Semiconductor Materials" This paper outlines the recent trends of VB-GaAs, VCZ-InP, and GaN substrate. |
| March 1, '01 | Japan Society of Applied Physics | Seiji Nakahata et al |
TEM observation of the action of the trial production Ⅱ-dislocation action observation dislocation of the diameter GaN substrate of a large quantity |
| March 1, '01 | Japan Society of Applied Physics | Kensaku Motoki et al. |
The trial production of the diameter GaN substrate of a large quantity-Ⅰ. Growth, a substrate characteristic GaN creation process, and evaluation |
| '01/2 | JJAP | Kensaku Motoki et al. |
"Preparation of Large Selfstanding GaN Substrates by Hydride Vapor Phase EpitaxyGaAs(111)" GaAs is removed after carrying out thick film growth in HVPE on A substrate, and a GaN substrate is ground and formed. |
| '00/12/18 | Japan Institute of Metals northeast branch discourse meeting | Yasuo Namikawa | Aluminum diffusion heat treatment to the ZnSe single crystal growth and the substrate by the application Semi-opened tube PVT method to aluminum diffusion and white Light Emitting Diode to a PVT growth ZnSe board. The feature and the characteristic of white Light Emitting Diode using the substrate. |
| '00/12/01 | OPTRONICS 12(2000)126 | Takao Nakamura | "Development of ZnSe based White Light Emitting Diode" |
| '00/11 | Electric Parts and Materials | Shin-ichi Sawada So Tanaka Toshio Ueda Ryusuke Nakai |
"Recent trend of GaAs -related materials" This paper outlines about the recent technical trend of VB-GaAs substrates and OMVPE epi. |
| '00/7/01 | Japanese J. of Crystal Growth | Shinsuke Fujiwara et al. |
"Growth of ZnSe single crystal by CVT method" |
| '00/3/01 | Spring Meeting of Japan Society Applied Physics and Related Societies | Makoto Kiyama Michio Tajima Masaki Noji Hiroaki Yoshida |
"Comparison of Annealing Effect on Uniformity between Boat-Grown and Czochralski-Grown GaAs Wafers" After annealing, VB-crystals have higher uniformity of PL and resistivity than LEC-crystals. |
| '99/9 | SEI Technical Review | Shin-ichi Sawada | "Development of 6 inch VB-GaAs wafer" SEI succeeds in the development of 6 inch VB-GaAs single crystals. |
| '99/9/01 | J. Cryst. Growth,210(200)212 | Makoto Kiyama Hidekazu Mukai Hiroaki Yoshida Takashi Sakurada Ryusuke Nakai |
"Laser scattering defects in MBE-grown GaAs epitaxial layers related to The micro dispersion object in dislocations in semi-insulating substrates" GaAs EPI is investigated. It considers EPI on existing near the dislocation succeeded from the substrate and a substrate with little dislocation (VB) having few dispersion objects, and excelling as a substrate for power devices. |
| '99/9/01 | DRIP-VIII | Makoto Kiyama Hidekazu Mukai Hiroaki Yoshida Takashi Sakurada Ryusuke Nakai |
the same as above |
| '99/9/01 | SEI TECHNICAL REVIEW | Hideki Matsubara | "Development of Homo-epitaxial ZnSe based White Light Emitting Diode" |
| '99/8/ | J. of Crystal Growth | Koji Katayama et al. |
"ZnSe-based White LED" |
| '99/5 | J. of Crystal Growth | Shinsuke Fujiwara et al. |
"Growth of 1-inch diameter ZnSe single crystal by the Rotational CVT method" |
| '99/1/01 | J. Crystal Growth | Shinsuke Fujiwara et al. |
"Growth of ZnSe single crystal by CVT method with self-moving convection shield" |
| Joint works | JJAP,39(2000)2585 | Makoto Kiyama Michio Tajima Masaki Noji |
"Characterization of Interfaces in GaAs Epitaxial Wafer by Spatially Resolved Photoluminescence from Cleaved Face" Powerfull toll of characterizing interfaces between epi. and sub. |