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GaAs LPE Epitaxial Wafers

Feature

  • Good uniformity (Power, Epi-Thickness, Total Thickness).
  • Mirror like surface.
  • High reliability.
  • Stability of p-n interface without thyristor.

Application

Infrared LED

  • Coupler, Interrupter
  • Remote Controller

Standard Specifications

GaAs LPE Epitaxial Wafers

Other Specifications are available on request.

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