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Power Device Development Division

Silicon carbide (SiC) is a promising material for high power and high efficiency power devices which promote an advanced, energy-saving society. We are developing SiC crystals and epitaxial wafers using high-quality and cost-effective growth technology (MPZ™*). Newly designed SiC power transistors and modules with low power loss and high blocking voltage are also being developed. Our power system equipment will incorporate these SiC power devices in the near future.

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Multi-Parameter and Zone controlled SiC Growth Technology
Power Device Development Division

High quality SiC crystal and epitaxial wafers

We are developing SiC crystals using MPZ™ technology, which controls the temperature and the reaction process during crystal growth precisely.
Single crystal epitaxial layers are grown on the sliced and polished SiC wafers.
Extremely uniform epitaxial layers are also grown on 150 mm diameter wafers using MPZ™ technology.
SiC power transistors are fabricated on epitaxial wafers through several semiconductor processes such as lithography, ion implantation, deposition, and metallization.

SiC transistors on epitaxial wafer
SiC transistors on epitaxial wafer

High efficiency SiC power transistors and modules

V-grooved trench metal oxide semiconductor field effect transistors (VMOSFETs) have been newly developed by utilizing unique crystal planes. VMOSFETs have superior features such as high efficiency, high blocking voltage, and high stability within severe environments. A large current (150 A per single chip) has been achieved, which is suitable for electric vehicles (EVs) and hybrid electric vehicles (HEVs). A compact full-SiC module with low stray inductance has also been developed for the best use of SiC devices' high speed operation.

High efficiency SiC power transistors and modules
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