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Power Device Development Division

Silicon carbide (SiC) is a promising material for next generation power devices to enhance energy efficiency. We are promoting the development of SiC crystals and epitaxial wafers by using high quality and cost effective growth technology (MPZ™*).
In addition, we are working on the development of SiC power devices and modules with low power loss and high blocking voltage for future commercialization.

*
MPZ: Multi-Parameter and Zone controlled SiC Growth Technology
Power Device Development Division

High quality SiC crystal and epitaxial wafer

We are developing high quality and large diameter SiC crystals by using the MPZ™ that accurately controls temperature and the reaction process during crystal growth.
Single crystal epitaxial layers are grown on sliced and mirror finishing SiC wafers by means of the chemical vapor deposition (CVD) method.
By using the MPZ™, our epitaxial wafers have the world’s highest uniformity without defects on more than 99% of wafer surface, which are commercialized under the trade name of EpiEra™.
SiC power transistors are fabricated on epitaxial wafers through semiconductor processes such as ion implantation, insulating film formation and electrode formation.

SiC transistors on epitaxial wafer
SiC transistors on epitaxial wafer

High efficiency SiC power transistor and module

We have developed V-groove trench metal oxide semiconductor field effect transistors (VMOSFETs) with high efficiency, high blocking voltage and high stability on specific crystal planes, which have large current characteristics at 200A per single chip and are expected to be applied to electric vehicles (EVs) and hybrid electric vehicles (HEVs) to improve energy efficiency.
We are also developing SiC power modules with low parasitic inductance for high speed operation.

High efficiency SiC power transistor and module
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