November 29, 2016,10:00 +0900(JST) SiC Power Semiconductor Devices Production Line
I attended a ceremony to celebrate the completion of a new production line at the Tsukuba Innovation Arena (TIA) Power Electronics Research Center. The production line, which enables mass production of silicon carbide (SiC) power semiconductor devices, has been collaboratively constructed by the National Institute of Advanced Industrial Science and Technology (AIST) and our company since last November.
To step further from basic research, we will develop technologies for mass production, reliability evaluation, and quality assessment of the world's most advanced and fastest SiC power semiconductors. This is the world's first open innovation base that achieved a manufacturing process of large 6-inch-diameter wafers.
I have always focused on SiC technology, which can help reduce energy loss, contribute to energy conservation, and lessen environmental loads, and together with superconducting technology, I place it at an extremely important position in our development and business strategies.
Since my time as an auditor at AIST, I also have felt that building a mutually complementary relationship with other companies is effective. I hope that the completion of this new production line becomes a critical milestone in the transition toward practical and widespread use of SiC power semiconductors by conducting meticulous research and development through close collaboration and cooperation.