Transmission Devices Laboratory
We possess various unique technologies of crystal growth for compound semiconductors, optoelectronic devices such as semiconductor lasers and photodiodes featuring epitaxy and processing, electronic devices such as HEMTs and microwave ICs, and modules and optical data links. In addition, by vertically integrating these technological assets, we develop cutting-edge technologies to address two main markets in information and communication field (optics and wireless) and continue providing high-performance products with advanced function. Further, we continue our R&D regarding sophistication of compound semiconductor crystals and aim to expand our business into ultraviolet, mid-infrared, and high-voltage areas.
Sumitomo Electric’s compound semiconductors and their applications
Compound semiconductors are widely used in various application fields in which silicon devices cannot be used. Sumitomo Electric has developed a variety of materials as a pioneer in this field.
Making use of our technologies of bulk crystal growth, epitaxial growth, simulation technique, characterization and analysis, we are promoting research and development on high-quality, cost-effective solutions for application-specific needs as well as on challenges for new materials.
Product development and key technologies
Compound semiconductors are widely used for optical devices and electronic devices. In each of these areas, we work on the technological development aiming at downstream products such as epitaxial wafers, devices and modules, based on our material and device technologies.
Material design technologies
In the past, material designs depended on experiment alone. However, we are now working on the simulation technologies that will help us expand our total range of R&D, such as the first principle calculation and thermal-fluid analysis technique.
We anticipate various applications, such as the creation of new materials and the development of production process.
We are a leading company of semiconductor optical devices that are key components in optical communication systems. The product family covers 10Gbit/s LD, CWDM LD, DWDM electro-absorption modulators integrated with LDs and tunable LDs, etc.
To provide these devices, we have been developing various cutting-edge technologies such as high quality epitaxial growth technology, sub-micron wafer process technology, and reliability assurance technology.
Our optical sub-assemblies realize high performance, low power consumption and compactness with the combination of our own device technologies such as photo-detectors, light emitting devices, ICs and design technologies of high-density assembling and unique packaging for high-speed transmission. To meet the requirements of various optical communication systems, we intend to continuously supply cutting-edge products to the world.
Through the contribution to the standardization of optical transmission specification, we are developing high speed optical transceivers. Employing elemental technologies including high-speed analog circuit, digital control and mechanical design as well as our accumulated technologies such as optical devices, OSA and IC design, we push forward with the miniaturization and power saving at 100 Gbit/s transmission (25 Gbit/s wavelength), and also exploring new technologies at 400 Gbit/s transmission (50-100 Gbit/s wavelength).
Toward the deployment of 10 Tbit/s-class ultra large capacity transmission using wavelength division multiplexing, digital coherent transmission technologies have recently been the focus of attention.
Using our unique compound semiconductor technologies, we are working on the development of important components such as high-power and narrow linewidth tunable light sources, multi-level modulators, and coherent receivers.
We are the pioneer of gallium arsenide (GaAs) HEMT*and have played an important role in the development of wireless communication. Quickly applying the technology to gallium nitride (GaN), we have greatly contributed to the miniaturization and efficiency enhancement of base stations for high-speed mobile communication (LTE). We are also focusing on higher frequency and output devices for larger capacity communication among base stations and satellites, as well as for solid state radars. MMICs* , that comprise integrated HEMTs, are also used in millimeter wave automotive radars.
Ultracompact RGB laser module
We are developing ultracompact RGB laser modules by the combination of our proven visible laser and precision-packaging technologies and the integration of semiconductor lasers in three primary colors: red, green and blue, optical components and thermoelectric cooler.
We ensure its stable operations for a wide range of temperatures by the integration of three semiconductor lasers composed of different base materials and the effective temperature control using a thermoelectric cooler. We also achieve its high beam quality without bleeding by our laser alignment technology.
It is expected to be applied widely to head-up display, projector, pointer, illumination and other industrial products.
Development of semiconductor thin films
We are conducting research on the thin film growth technology of compound semiconductor crystals. Aiming at the applications to near-infrared sensors for chemical imaging, light-emitting devices and advanced power transistors, novel thin film crystals are being developed using our nano-structural analysis.
Infrared imaging sensors
We have been developing infrared imaging sensors based on the photo-detector technologies used for optical communications. These sensors are suitable for a wide range of microanalysis due to their low noise characteristics. Applications for these sensors can be found in imaging systems for biopsy, foods and agricultural products inspection as well as toxic and environmental gas monitoring.