Transmission Devices Laboratory
We are developing leading edge technologies and providing high performance products widely used in the communication industry. For optical networks, we have developed high performance optical devices, sub-assemblies and transceivers. We have also developed high speed, high power electron devices such as HEMTs and MMICs for wireless communication. Our development is based on vertical integration of creative technologies such as crystal growth of compound semiconductors, wafer processing, assembling technique, and advanced design ability.
We are a leading company of semiconductor optical devices that are key components in optical communication systems. The product family covers 10Gbit/s LD, CWDM LD, DWDM electro-absorption modulators integrated with LDs and tunable LDs, etc.
To provide these devices, we have been developing various cutting-edge technologies such as high quality epitaxial growth technology, sub-micron wafer process technology, and reliability assurance technology.
Our optical sub-assemblies realize high performance, low power consumption and compactness with the combination of our own device technologies such as photo-detectors, light emitting devices, ICs and design technologies of high-density assembling and unique packaging for high-speed transmission. To meet the requirements of various optical communication systems, we intend to continuously supply cutting-edge products to the world.
Through the contribution to the standardization of optical transmission specification, we are developing high speed optical transceivers. Employing elemental technologies including high-speed analog circuit, digital control and mechanical design as well as our accumulated technologies such as optical devices, OSA and IC design, we push forward with the miniaturization and power saving at 100 Gbit/s transmission (25 Gbit/s wavelength), and also exploring new technologies at 400 Gbit/s transmission (50-100 Gbit/s wavelength).
Toward the deployment of 10 Tbit/s-class ultra large capacity transmission using wavelength division multiplexing, digital coherent transmission technologies have recently been the focus of attention.
Using our unique compound semiconductor technologies, we are working on the development of important components such as high-power and narrow linewidth tunable light sources, multi-level modulators, and coherent receivers.
We are the pioneer of gallium arsenide (GaAs) HEMT*and have played an important role in the development of wireless communication. Quickly applying the technology to gallium nitride (GaN), we have greatly contributed to the miniaturization and efficiency enhancement of base stations for high-speed mobile communication (LTE). We are also focusing on higher frequency and output devices for larger capacity communication among base stations and satellites, as well as for solid state radars. MMICs* , that comprise integrated HEMTs, are also used in millimeter wave automotive radars.
Infrared imaging sensors
We have been developing infrared imaging sensors based on the photo-detector technologies used for optical communications. These sensors are suitable for a wide range of microanalysis due to their low noise characteristics. Applications for these sensors can be found in imaging systems for biopsy, foods and agricultural products inspection as well as toxic and environmental gas monitoring.