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GaAs Substrates
InP Substrates
GaN Substrates
Epitaxial Wafers
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（*1） LPD：Light Point Defects （*2） Individual Container is also available. （*3） Notch：Axis〔010〕, Depth 1㎜, Angle 90°
- Standard
Resistivity・Mobility・Diameter・OF・IF・Thickness（min.～max.）
- Option
EPD Map・Accuracy of Orientation・Light Point Defects
Semi-Insulating
for LEDs
for Lasers
Other specifications
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