Compound Semiconductor
Site Map Contact Us
Products Index  Technologies About Us Locations  Compound Semiconductor

GaAs LPE Epitaxial Wafers

Home > Product Index > Epitaxial Wafers > GaAs LPE Epitaxial Wafers

[ Download PDF version formatted for print : 697KB ]

Feature

-Good uniformity (Power, Epi-Thickness, Total Thickness).
-Mirror like surface.
-High reliability.
-Stability of p-n interface without thyristor.

Application

Infrared LED
-Coupler, Interrupter
-Remote Controller
-Sensor

 
Standard Specifications
 

Adjusting Other Specifications are available on request.

To Catalog List (Epitaxial Wafers)

GaAs LPE

InP OMVPE

AlGaInP OMVPE

PAGE TOP
(C) 2007 Sumitomo Electric Industries, Ltd.
Using This Site Privacy Policy