Home > Product Index > Epitaxial Wafers > GaAs LPE Epitaxial Wafers
GaAs Substrates
InP Substrates
GaN Substrates
Epitaxial Wafers
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-Good uniformity (Power, Epi-Thickness, Total Thickness). -Mirror like surface. -High reliability. -Stability of p-n interface without thyristor.
Infrared LED -Coupler, Interrupter -Remote Controller -Sensor
Adjusting Other Specifications are available on request.
GaAs LPE
InP OMVPE
AlGaInP OMVPE